PART |
Description |
Maker |
JB99T |
20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES
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GETAI ELECTRONICS DEVIC...
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2CL2FM |
20kV 100mA HIGH VOLTAGE DIODE
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getedz electronics
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G20FP |
20kV 10mA HIGH VOLTAGE DIODES
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getedz electronics
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ESJA53-16A |
5mA 16kV HIGH VOLTAGE SILICON RECTIFIER DIODES
|
getedz electronics
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20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
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MDE Semiconductor
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2CL71B |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 8KV Forward Current 5mA
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Rugao Dachang Electronics Co., Ltd
|
SHV-06 |
6kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
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SHV-10 |
10kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
SHV-12 |
12kV 5mA HIGH VOLTAGE DIODES
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getedz electronics
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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BFP181 Q62702-F1271 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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