| PART |
Description |
Maker |
| NP48N055KHE NP48N055KHE-E1-AY NP48N055KHE-E2-AY NP |
48 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
| NP80N04PUG NP80N04PUG-E1B-AY NP80N04PUG-E2B-AY NP8 |
MOS FIELD EFFECT TRANSISTOR
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
Yuasa Battery, Inc.
|
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT5026HVR |
POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8065 APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5030AVR |
POWER MOS V 500V 14.7A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
