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HYS72T256322HP - 240-Pin Dual-Die Registered DDR2 SDRAM Modules

HYS72T256322HP_6348358.PDF Datasheet


 Full text search : 240-Pin Dual-Die Registered DDR2 SDRAM Modules


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240-Pin Registered DDR2 SDRAM Modules 128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
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240-Pin Registered DDR2 SDRAM Modules 256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
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http://
HYS72T128000HP2.5-B HYS72T128020HP25F-B HYS72T2562 240-Pin Registered DDR2 SDRAM Modules
Qimonda AG
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
0702871037 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 78 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
Molex Electronics Ltd.
70287-1015 0702871015 2.54mm (.100) Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
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Molex Electronics Ltd.
0702871206 70287-1206 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 24 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective Plating
MOLEX Connector
Molex Electronics Ltd.
0702871220 70287-1220 2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
Molex Electronics Ltd.
 
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