| PART |
Description |
Maker |
| STF6N62K3045Y |
N-channel 620 V, 0.95 Ohm typ., 5.5 A MDmesh K3 Power MOSFET in TO-220FP narrow leads package
|
ST Microelectronics
|
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| STF3N62K3 STP3N62K3 STB3N62K3 STD3N62K3 STU3N62K3 |
N-channel 620 V, 2.2 ヘ , 2.7 A SuperMESH3⑩ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3?/a> Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
N-channel 620 V, 2.2 楼? , 2.7 A SuperMESH3垄芒 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
|
STMicroelectronics
|
| NDF10N62Z NDF10N62ZG NDP10N62Z NDP10N62ZG |
N-Channel Power MOSFET 620 V, 0.65 ?
|
ON Semiconductor
|
| NDD04N62ZT4G NDP04N62ZG NDF04N62Z NDF04N62ZG |
N-Channel Power MOSFET 620 V, 1.8
|
ON Semiconductor
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STP17N62K3 |
15 A, 620 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
| STP9N65M2 STD9N65M2 STF9N65M2 |
Extremely low gate charge
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
| 1SS302 |
Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
|
TY Semiconductor Co., Ltd
|
| BAS116 |
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
|
TY Semiconductor Co., Ltd
|
