| PART |
Description |
Maker |
| QM50TB24 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1.2KV五（巴西）总裁| 50A条一（c
|
Mitsubishi Electric, Corp.
|
| FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| UPSC203 UPSC403 UPSC603 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
Microsemi Corporation
|
| SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| BYY58A-800 BYY57A BYY57A-100 BYY57A-150 BYY57A-200 |
50A Silicon Power Rectifier Diode 50 A, 100 V, SILICON, RECTIFIER DIODE
50A Silicon Power Rectifier Diode 50 A, 300 V, SILICON, RECTIFIER DIODE
50A Silicon Power Rectifier Diode 50 A, 600 V, SILICON, RECTIFIER DIODE
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| DA6/1200 |
6.0A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier
|
Eupec Power Semiconductors
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CMF20120D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| GA50JT06-CAL-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| C3D10065I |
Silicon Carbide Schottky Diode
|
Cree
|
|
