| PART |
Description |
Maker |
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| 2MBI225U4J-120-50 AN28F256A-150 AN28F256A-120 AP28 |
x8 Flash EEPROM
IGBT Module 300 A, 1200 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| APT35GT120JU3 |
ISOTOP Buck chopper Trench IGBT 55 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| SEMIX352GB128DS08 |
SPT IGBT Modules 370 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
