PART |
Description |
Maker |
FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
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Fairchild Semiconductor, Corp.
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FT0018 FT0018-15 |
N-Channel Trench Gate MOSFET
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Solid States Devices, Inc Solid States Devices, I...
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CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
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POWEREX[Powerex Power Semiconductors]
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SFF75N08Z SFF75N08M |
55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET
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SSDI[Solid States Devices, Inc]
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CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
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Mitsubishi Electric Semiconductor Powerex Power Semiconductors
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SFF35N20Z SFF35N20M |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET
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SSDI[Solid States Devices, Inc]
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ISL9N322AD3ST |
POWER SUP SWITCHER 41W 5.1V MED 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022 з N-Channel Logic Level UltraFET Trench MOSFET 30V 20A 0.022 N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022 ?
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
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POWEREX[Powerex Power Semiconductors]
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ISL9N308AD3 ISL9N308AD3ST ISL9N308AD3STNL |
N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhm N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
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POWEREX[Powerex Power Semiconductors]
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