| PART |
Description |
Maker |
| RMX-354-1224 RMX-354-1205 RMX-354-1212 RMX-354-151 |
350 WATTS POWER FACTOR CORRECTED MULTIPLE OUTPUT, HOT SWAP
|
SL Power Electronics
|
| MJE18002 MJF18002 ON2019 |
From old datasheet system
Switching Power Supply Applications
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 AND 50 WATTS
|
Motorola, Inc.
ON Semiconductor
|
| SPI1000GCM |
1000 Watts ATX12V and EPS12V Switching Power Supply
|
Sparkle Power Inc.
|
| MJF18006 MJE18006 ON2022 |
Switching Power Supply Applications
POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MJE18004 MJF18004 ON2021 |
POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
Switching Power Supply Applications
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| AND8016/D |
Design of Power Factor Correction Circuit Using Greenline Compact Power Factor Controller
|
ON Semiconductor
|
| PD10-0051-SMA PD15-0005-SMA PD25-0015-SMA |
RF Power Dividers 101000 MHz2 Watts
10 MHz - 1000 MHz RF/MICROWAVE SPLITTER, 1.5 dB INSERTION LOSS
|
M/A-COM Technology Solutions, Inc.
|
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
