PART |
Description |
Maker |
W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA |
512Mb (4MBank2) Double DATA RATE SDRAM 512Mb (4MBank32) Double DATA RATE SDRAM 512Mb (4M4Bank2) Double DATA RATE SDRAM
|
Electronic Theatre Controls, Inc.
|
EM42AM1684RTB EM42AM1684RTB-5F EM42AM1684RTB-6F |
256Mb (4M隆驴4Bank隆驴16) Double DATA RATE SDRAM 256Mb (4M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM 512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features 512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ... Micron Technology
|
HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
NT5DS64M4AT NT5DS64M4AT-75B NT5DS64M4AT-7K NT5DS64 |
256Mb Double Data Rate SDRAM
|
List of Unclassifed Manufacturers
|
W942504CH-75 |
DDR SDRAM (Double Data Rate)
|
Winbond Electronics
|