| PART |
Description |
Maker |
| 2SC5176 E001060 |
From old datasheet system
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS)
HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONCERTER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| LTC1775 LTC1775I LTC1775IGN LTC1775IS LTC1775C LTC |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 85
High Power No RSENSE Current Mode Synchronous Step-Down Switching Regulator; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
High Power No RSENSE Current Mode Synchronous Step-Down Switching Regulator; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C
High Power No RSENSE TM Current Mode Synchronous Step-Down Switching Regulator
|
Linear Technology Corporation
LINER[Linear Technology]
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3303 E000823 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS)
HIGH CURRENT SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK1120 E001315 2SK1120F |
From old datasheet system
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CMPD415010 |
SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| 2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
