| PART |
Description |
Maker |
| H5TQ1G63BFR-XXC |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| K4B1G1646E |
1Gb E-die DDR3 SDRAM
|
Samsung
|
| K4B1G0846G-BCMA K4B1G0846G-BCH9 K4B1G0846G-BCK0 K4 |
1Gb G-die DDR3 SDRAM
|
Samsung semiconductor
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G1646D K4B1G1646D-HCF7 K4B1G1646D-HCF8 K4B1G16 |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| H5TQ1G63AFP H5TQ1G83AFP H5TQ1G43AFP H5TQ1G43AFPR-G |
1Gb DDR3 SDRAM
256M X 4 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
128M X 8 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
|
Hynix Semiconductor, Inc.
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HMT41GS6MFR8C |
DDR3 SDRAM
|
Hynix Semiconductor
|
