| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| MB511 |
1GHz HIGH SPEED PRESCALER
|
FUJITSU
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| UJA1078 UJA1078TW/5V0/WD UJA1078TW/3V3/WD UJA1078T |
Hihg-speed CAN/dual LIN core system basis chip
DATACOM, ETHERNET TRANSCEIVER, PDSO32
High-speed CAN/dual LIN core system basis chip
|
NXP Semiconductors
|
| EW750-100-FB EW750-100-GB EW750-100-JB EW750-100-K |
HIGH POWER EDGEWOUND RESISTORS TUBULAR, 75 WATT to 2000 WATT
|
RCD COMPONENTS INC.
|
| G6K-2F-RF-TDC5 G6K-2F-RF-S |
Surface Mount, 1GHz / 3 GHz Miniature DPDT, High Frequency Relay
|
Omron Electronics LLC
|
