PART |
Description |
Maker |
MT29F4G08ABADAH4 MT29F4G16ABBDAH4 MT29F8G08ADADAH4 |
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
|
Micron Technology
|
MT29F2G08AABWP MT29F8G08FABWP MT29F4G16BABWP |
(MT29FxGxxBxBWP) 8Gb x8/x16 Multiplexed NAND Flash Memory
|
Micron Technology
|
KVR13N9S8HK2-8 |
8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
|
List of Unclassifed Man...
|
K524G2GACB-A050 |
4Gb NAND Flash 2Gb Mobile DDR
|
Samsung semiconductor
|
S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
TS8GJF220 |
8GB USB2.0 JetFlash垄芒220 8GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
TS8GJF2A |
8GB USB2.0 JetFlash垄莽 8GB USB2.0 JetFlash?
|
Transcend Information. Inc.
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71 TRIMMER, 15 TURN 20K CONN HEADER 12POS DL PCB 30GOLD 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
TS4GJF300 |
4GB USB2.0 JetFlash垄莽300 4GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|