| PART |
Description |
Maker |
| IT3D-300S-BGA TR0636E-20027 |
IT3D(M)-300S-BGA (57) BGA Shearing Force TEST REPORT
|
Hirose Electric
|
| HYRDU64164M-80M HYRDU72184M-80M HYRDU72184M-60M |
4M X 16 RAMBUS, PBGA66 MICRO, BGA-66
4M X 18 RAMBUS, PBGA74 MICRO, BGA-74
|
Hynix Semiconductor, Inc.
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET
From old datasheet system
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| IBM25PPC740-DB0M2660 IBM25PPC740-EB0M2660 IBM25PPC |
32-BIT, 266 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 233 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 200 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 300 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
|
Japan Aviation Electronics Industry, Ltd.
|
| IBM25PPC405EP-3GB200C IBM25PPC405EP-3GB133C IBM25P |
32-BIT, 200 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 133.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 333.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 266.66 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
|
Electronic Theatre Controls, Inc.
|
| GDPXA255A0C400 GDPXA255A0E200 GDPXA255A0C200 GDPXA |
32-BIT, 400 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 200 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 300 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
|
Intel, Corp.
INTEL CORP
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| N01L1618N1AB2-70I N01L1618N1AB-70I |
64K X 16 STANDARD SRAM, 70 ns, PBGA48 GREEN, BGA-48
64K X 16 STANDARD SRAM, 70 ns, PBGA48 BGA-48
|
ON Semiconductor
ST Microelectronics
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| GS8322Z72C-225T GS8322Z72GC-225T GS8322Z18B-225IT |
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
2M X 18 ZBT SRAM, 7 ns, PBGA119
|
GSI Technology, Inc.
|
|
