| PART |
Description |
Maker |
| K4H511638B-TC/LB3 |
DDR Sdram 512Mb B-die
|
Samsung Semiconductor
|
| K4T51163QC-ZCE6 K4T51163QC-ZCLD5 K4T51163QC-ZLE7 K |
512Mb C-die DDR2 SDRAM 荤的512Mb芯片DDR2内存
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H51 |
512Mb C-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4H510438C-ZCCC K4H510438C-ZLB3 K4H510438C-ZLCC K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H511638F-LC/LCC K4H510438F-LC/LB3 K4H510838F-LC/ |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
| HFDOM40B-064S2 HFDOM40B-064S1 HFDOM40B-064SX HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HFDOM44P-016S1 HFDOM44P-032S2 HFDOM44P-032SX HFDOM |
44Pin Flash Disk Module Min.16MB~Max.512MB, True IDE Interface Mode, 3.3V/5.0V Operating 44Pin盘模块Min.16MBMax.512MB，真正的IDE接口模式3.3V/5.0V工作
44Pin Flash Disk Module Min.16MB~Max.512MB, True IDE Interface Mode, 3.3V/5.0V Operating 44Pin盘模块Min.16MBMax.512MB，真正的IDE接口模式.3V/5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| K4H510838C-ZCCC K4H510438C-ZCCC K4H510838C-ZCB3 K4 |
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 2701799 |
Memory - SD FLASH 512MB APPLIC A
|
PHOENIX CONTACT
|
| AM29F200BB-120DPI1 AM29F200BB-90DG1 AM29F200BB-90D |
128K X 16 FLASH 5V PROM, 70 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
|
SPANSION LLC
http://
|
