PART |
Description |
Maker |
AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位).0伏的CMOS只。同时作业闪 2M X 8 FLASH 3V PROM, 80 ns, PBGA48 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 2M X 8 FLASH 3V PROM, 90 ns, PBGA48
|
AMIC Technology, Corp. ADVANCED MICRO DEVICES INC
|
GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0 |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32
|
SILICON STORAGE TECHNOLOGY INC
|
M29F200FB55N6F2 M29F800FB55N3F2 M29F800FB55N3S2 M2 |
128K X 16 FLASH 5V PROM, 55 ns, PDSO48 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 1M X 16 FLASH 5V PROM, 55 ns, PDSO48 128K X 16 FLASH 5V PROM, 55 ns, PDSO44 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
|
NUMONYX
|
S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64 4M X 16 FLASH 3V PROM, 90 ns, PBGA48 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc. SPANSION LLC
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
|
M25P32-VMW6G M25P32-VMP6G M25P32-VMW6P |
4M X 8 FLASH 2.7V PROM, PDSO8 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 4M X 8 FLASH 2.7V PROM, DSO8
|
Numonyx Asia Pacific Pte, Ltd.
|
W29EE012 W39L020P-70 W39L020P-70B W39L020P-90 W39L |
128K X 8 FLASH 5V PROM, 90 ns, PQCC32 128K X 8 FLASH 5V PROM, 90 ns, PDSO32 128K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 3.3V PROM, 90 ns, PDSO32
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC
|
SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位(x16)的多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc.
|
|