| PART |
Description |
Maker |
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| FM4006L-HF-W FM4007L-HF FM4003L FM4004L-HF-T |
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 1000 V, SILICON, SIGNAL DIODE
1 A, 200 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
|
RECTRON LTD
|
| ZHCS1006TA ZHCS500TA ZHCS750TA UZHCS500TA UZHCS500 |
DIODE SCHOTTKY 60V 1.0A SOT-23 0.9 A, SILICON, SIGNAL DIODE
DIODE SCHOTTKY 40V 0.5A SOT-23 0.5 A, SILICON, SIGNAL DIODE
0.75 A, SILICON, SIGNAL DIODE MINIATURE PACKAGE-3
0.4 A, SILICON, SIGNAL DIODE
|
Zetex Semiconductor PLC
ZETEX PLC
DIODES INC
|
| BYD33DGP-HE3 BYD33GGP-E3 |
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Semiconductors
|
| BAT54S-V BAT54-V BAT54A-V BAT54-V10 BAT54C-V BAT54 |
Small Signal Schottky Diodes, Single and Dual
0.2 A, 30 V, SILICON, SIGNAL DIODE
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| MA141WATX MA142AH 2SK663H |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, SILICON, SIGNAL DIODE
30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
PANASONIC CORP
|
| RTD12 BCD25 BCD35 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.1 A, 25000 V, SILICON, SIGNAL DIODE
0.1 A, 35000 V, SILICON, SIGNAL DIODE
|
|
| MMBD4448 1P85MMBD4448 |
0.2 A, 75 V, SILICON, SIGNAL DIODE
High Conductance Fast Diode 0.2 A, SILICON, SIGNAL DIODE, TO-236AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
|
