PART |
Description |
Maker |
GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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GP801DDS18 |
Dual Switch Low VCE(SAT) IGBT Module 800 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN 22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN 1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp. MICROSEMI CORP
|
IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
IXGR50N60B2D1 IXGR50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT 68 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
|
IXYS, Corp.
|
IXGR40N60B2 |
60 A, 600 V, N-CHANNEL IGBT ISOPLUS 247, 3 PIN IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS, Corp.
|
STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB From old datasheet system N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT 5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2MBI75S 2MBI75S-120 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列,包IGBT200X75A 5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
|
http:// FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
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