PART |
Description |
Maker |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
1MBI600PX-120 |
IGBT MODULE 800 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp. MICROSEMI POWER PRODUCTS GROUP
|
IRFD320 FN2325 |
500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET 0.5A 400V 1.800 Ohm N-Channel Power MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET From old datasheet system 0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT |
45 A, 600 V, UFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability IGBT Discretes: Low Saturation Voltage Types High Voltage IGBT(VCES200V,VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD 1200V high voltage IGBT
|
IXYS Corporation IXYS, Corp.
|
IXGR50N60B2D1 IXGR50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT 68 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
|
IXYS, Corp.
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
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