| PART |
Description |
Maker |
| MA44768RT3 MA44769RT3 |
2.5 GHz, SILICON, STEP RECOVERY DIODE
|
|
| ASRD803D-TR ASRD814T-TR ASRD803T-TR ASRD814D-TR AS |
SURFACE MOUNT STEP RECOVERY DIODE SILICON, STEP RECOVERY DIODE
SURFACE MOUNT STEP RECOVERY DIODE 表面贴装阶跃恢复二极
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASRD715B ASRD725B ASRD703 ASRD703B ASRD751T ASRD75 |
GLASS PACKAGE STEP RECOVERY DIODE SILICON, STEP RECOVERY DIODE
GLASS PACKAGE STEP RECOVERY DIODE 玻璃包装阶跃恢复二极
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASI30263 |
SILICON, STEP RECOVERY DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| MAATSS0018TR MAATSS0018 |
Digital Attenuator, 1-Bit, 10 dB Step DC - 2.0 GHz
|
MACOM[Tyco Electronics]
|
| MAATSS0018TR MAATSS0018 |
Digital Attenuator, 1-Bit, 10 dB Step DC - 2.0 GHz
|
M/A-COM Technology Solutions, Inc.
|
| AT-267 AT-267TR AT-267TR-3000 AT-267SMB |
Digital Attenuator/ 1 Bit/ 15 dB Step DC - 2.0 GHz
|
Tyco Electronics
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| PE43705 PE43705A-Z |
RF Digital Step Attenuator, 7-bit, 31.75 dB 50 MHz ?8 GHz
|
Peregrine Semiconductor
|
