| PART |
Description |
Maker |
| T7SH024.58GDN T72H024.58GDN T707063.258GDN T607021 |
706.5 A, SCR T7S, 3 PIN
706.5 A, SCR T72, 3 PIN
510.25 A, SCR T70, 3 PIN
196.25 A, SCR T60, 3 PIN
431.75 A, SCR T70, 3 PIN
392.5 A, SCR
109.9 A, 300 V, SCR
471 A, SCR
1177.5 A, SCR
785 A, SCR
942 A, SCR
2669 A, SCR
565.2 A, SCR
549.5 A, SCR
2512 A, SCR
1570 A, 700 V, SCR
235.5 A, SCR
62.8 A, SCR
1256 A, SCR
628 A, SCR
4710 A, SCR
1020.5 A, SCR
109.9 A, 150 V, SCR
1570 A, SCR
2826 A, SCR
3140 A, SCR
1727 A, SCR
|
Powerex, Inc.
POWEREX INC
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| CS202-4D-2 CS202-4M-2 CS202-4B-2 CS202-4N-2 |
4.0 AMP SCR 200 THRU 800 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor Corp
|
| CS218I-50B CS218I-50D CS218I-50PB CS218I-50M CS218 |
ISOLATED TAB SCR 50 AMP, 200 THRU 1200 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor Corp
|
| CS218I-30PBLEADFREE CS218I-30BLEADFREE CS218I-30DL |
30 A, 1200 V, SCR, TO-218
30 A, 200 V, SCR, TO-218
30 A, 400 V, SCR, TO-218
30 A, 600 V, SCR, TO-218
30 A, 1000 V, SCR, TO-218
35 A, 1200 V, SCR, TO-218
35 A, 1200 V, SCR, TO-48
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| CS48-35N CS48-35D CS48-35M CS48-35P CS48-35PB CS48 |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-48
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FS1209DH FS1209BH FS1209MH FS1210BH |
Standard Gate SCRs
600 V, standard SCR
200 V, standard SCR
400 V, standard SCR
|
Fagor
|
| SH200D21A SH200L21A |
314 A, 200 V, SCR
314 A, 800 V, SCR
|
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
|
| CS39-4BLEADFREE |
4 A, 200 V, SCR, TO-39
|
CENTRAL SEMICONDUCTOR CORP
|
|
