| PART |
Description |
Maker |
| MWI300-17E9 |
500 A, 1700 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| ZXM61N02FTC ZXM61N02F ZXM61N02FTA UZXM61N02FTC ZXM |
20V N-CHANNEL ENHANCEMENT MODE MOSFET
1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE
100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
|
| IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
| T0781 T0781-6C |
1700 - 2300 MHz High Linearity SiGe Active Receiver Mixer RF/MICROWAVE DOWN CONVERTER
1700-2300 MHz high intinerary SiGe active receive mixer
|
Atmel, Corp.
|
| STC03DE170 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm
From old datasheet system
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1700 V - 3 A - 0.55 Ohm
|
意法半导
STMicroelectronics
ST Microelectronics
|
| CM50TU-34KA |
Six IGBTMOD 50 Amperes/1700 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FFPF05U170S |
5 A, 1700 V, SILICON, RECTIFIER DIODE
|
FAIRCHILD SEMICONDUCTOR CORP
|
| B39182B9441M410 |
SAW Tx Filter KPCS & UMTS 1700
|
EPCOS
|
| HP1002SMD |
1700 - 2000 MHz Phase Shifter
|
HBH Microwave GmbH
|
