PART |
Description |
Maker |
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
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ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
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Agilent(Hewlett-Packard)
|
ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET
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HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
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ATF-10100 ATF-10100-GP3 |
0.5-12 GHz Low Noise Gallium Arsenide FET
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-10736 |
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
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AD8362ARU-REEL7 AD8362-EVAL AD8362ARUZ1 |
50 Hz to 2.7 GHz 60 dB TruPwr?/a> Detector 50 Hz to 2.7 GHz 60 dB TruPwrDetector 50赫兹.7 GHz 60分贝TruPwr⑩探测器
|
Analog Devices, Inc.
|
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
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RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
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