| PART |
Description |
Maker |
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF6P9220HR3 |
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
|
| SFH4580 SFH4585 |
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm
GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm)
|
红外LED
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MRF9135LR3 MRF9135L MRF9135LSR3 |
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
| OD-100 |
7.6073 mm, 1 ELEMENT, INFRARED LED, 880 nm TO-39,HERMETIC,3
|
霍尼韦尔
|
| LTE-5238A |
Property of Lite-On Only
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Lite-On Technology Corporation
LITE-ON ELECTRONICS INC
|
| MAMXES0120 |
E-Series Surface Mount Mixer 880 - 915 MHz
|
MACOM[Tyco Electronics]
|
| EMRS-6HX1 |
E-Series Surface Mount Mixer 880 . 915 MHz
|
MACOM[Tyco Electronics]
|
| OLS-150880-X-TD OLS-150880-X-TU OIS-150880 |
Series 150 - 1206 Standard IR high intensity 880 nm
|
OSA Opto Light GmbH
|
