| PART |
Description |
Maker |
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYMD512646AL8-H HYMD512646AL8-K HYMD512646A8-H HYM |
Unbuffered DDR SDRAM DIMM
128M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HYMD512646B8-H HYMD512646B8J-D43 HYMD512646B8J-J H |
1184pin Unbufferd DDR SDRAM DIMMs
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
|
Hynix Semiconductor
http://
Foxconn Technology Co., Ltd.
|
| HYMP125P72AP4-Y5 HYMP112P72AP8-Y5 HYMP112P72AP8-C4 |
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EBD11ED8ABFA-7A |
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
ELPIDA MEMORY INC
|
| NT1GT72U4PB0BV-25D |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
NANYA TECHNOLOGY CORP
|
| HYS72T128000EP-25F-B2 |
128M X 72 DDR DRAM MODULE, DMA240
|
QIMONDA AG
|
| HYS72T128320HP-3.7-B |
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
QIMONDA AG
|
| HMT351U6BFR8C-G7 HMT325U6BFR8C-H9 HMT351U7BFR8C-H9 |
512M X 64 DDR DRAM MODULE, DMA240
256M X 64 DDR DRAM MODULE, DMA240
512M X 72 DDR DRAM MODULE, DMA240
128M X 64 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D256220GBR-7-B HYS72D256320GBR-7-B HYS72D1283 |
184 - Pin Registered Double-Data-Rate SDRAM Module 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
Qimonda AG
|
