| PART |
Description |
Maker |
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| NDF10N60ZG |
10A 600V 0.65 Ohm Single N-Channel TO-220FP MOSFET 6 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| RFP8N20L FN1514 |
From old datasheet system
8A/ 200V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFET
8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| FQB12N60CTM |
12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BSP125L6327 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| SSS7N60A |
4 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 |
From old datasheet system
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
|
