PART |
Description |
Maker |
KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
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SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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KM48C512D |
High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高12K x 8CMOS 动态RAM(带快速页模式))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
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V53C8125H V53C8125H30 V53C8125H35 V53C8125H40 V53C |
Ultra-high performance 128K x 8bit fast page mode CMOS dynamic RAM ULTRA-HIGH PERFORMANCE, 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高性能28K的乘八快速页面模式的CMOS动态随机存储器 OSC 3.3V SMT 7X5 CMOS 超高性能28K的乘八快速页面模式的CMOS动态随机存储器 ULTRA-HIGH PERFORMANCE/ 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM
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Mosel Vitelic Corp Mosel Vitelic, Corp. Mosel Vitelic Corp
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A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存 (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ... Vanguard International Semiconductor, Corp.
|
K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM 128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp Mosel Vitelic, Corp Mosel Vitelic Corp
|
K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
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http:// SIEMENS A G SIEMENS AG
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