PART |
Description |
Maker |
MA2S376 |
Silicon epitaxial planar type UHF BAND, 15 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
SKY77916-11 |
Tx-Rx FEM for Quad-Band GSM /GPRS / EDGE w/ 14 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
MA2Z377 PANASONICCORP-MA2Z377 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE Silicon epitaxial planar type
|
Panasonic, Corp. Panasonic Semiconductor
|
SKY77573-21 |
Quad-band cellular handsets encompassing Tx-Rx Front-End Module for Quad-Band GSM/ GPRS/ EDGE with 4-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|
SKY77570-12 |
Quad-band cellular handsets encompassing Tx-Rx Front-End Module for Quad-Band GSM /GPRS / EDGE and TD-SCDMA with 6-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|
SKY77196 |
Dual-Band PA Module for WCDMA / HSDPA Band II (1850-1910 MHz) and Band V (824-849 MHz)
|
Skyworks Solutions Inc.
|