| PART |
Description |
Maker |
| B561-8I-10 B221-8I-10 B331-8I-10 B101-8I-10 B151-8 |
UNSHIELDED, 0.4 uH - 0.56 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.16 uH - 0.22 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.24 uH - 0.33 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.07 uH - 0.1 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.11 uH - 0.15 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.054 uH - 0.076 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.02 uH - 0.025 uH, VARIABLE INDUCTOR
|
Data Device, Corp.
ITT Interconnect Solutions
|
| HYMD212G726DF4-D43 HYMD212G726DF4-D43J HYMD212G726 |
184pin Registered DDR SDRAM DIMMs
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
http://
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| G331-8I-20 SG222-6I-20 G561-8I-20 G271-8I-20 SG682 |
UNSHIELDED, 0.24 uH - 0.33 uH, VARIABLE INDUCTOR
UNSHIELDED, 1.5 uH - 2.2 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.4 uH - 0.56 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.19 uH - 0.27 uH, VARIABLE INDUCTOR
UNSHIELDED, 4.5 uH - 6.8 uH, VARIABLE INDUCTOR
UNSHIELDED, 50 uH - 100 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.59 uH - 0.82 uH, VARIABLE INDUCTOR
|
GSI Technology, Inc.
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| E526HN-100304 E526HN-100315 E526HNA-100314 E526HN- |
COIL .13UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR
COIL .0437UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR
COIL .137UH TYPE MC120 W/CASE SHIELDED, VARIABLE INDUCTOR
COIL .118UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR
COIL .29UH TYPE MC120 W/CASE SHIELDED, VARIABLE INDUCTOR
COIL .211UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR
COIL .0461UH TYPE MC120 W/O CASE UNSHIELDED, VARIABLE INDUCTOR
COIL .141UH MC120 W/CASE SHIELDED, VARIABLE INDUCTOR
|
TOKO, Inc.
|
| TT101-8I-10 TT152-6I-00 TT221-8I-10 |
UNSHIELDED, 0.075 uH - 0.1 uH, VARIABLE INDUCTOR
UNSHIELDED, 1 uH - 1.5 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.16 uH - 0.22 uH, VARIABLE INDUCTOR
|
Data Device, Corp.
|
| AIRV-144-10.5T-JS AIRV-143-12.5T-J AIRV-144-4.5T-J |
SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.578 uH - 0.95 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.132 uH - 0.195 uH, VARIABLE INDUCTOR
SHIELDED, 0.433 uH - 0.585 uH, VARIABLE INDUCTOR
|
ABRACON CORP
|
| HYS64D32300HU-6-C HYS72D64320HU-6-C HYS72D64320HU- |
184-Pin Unbuffered Dual-In-Line Memory Modules
|
Infineon Technologies A...
|
| HYS72D256520GR-7-A HYS72D256520GR |
184 Pin Registered Double Data Rate SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D64301HBR07 |
184-Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| MT8VDDT3264AG-40BC4 |
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
|
Micron Technology
|
| HYS72D128300GBR HYS72D128300GBR-5-B HYS72D128300GB |
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
