| PART |
Description |
Maker |
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
ETC
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| CMS6416LAX-75XX |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
| CMS6416LAF CMS6416LAH CMS6416LAG |
64M(4Mx16) Low Power SDRAM
|
http://
|
| KS88C4716 KS88C4708 KS88P4716 |
new SAM87RC family of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mas
|
Samsung semiconductor
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX25L6405MI-20 MX25L6405MC-20G MX25L6405MI-20G |
64M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| MX25L6435E MX25L6435EM2I10G MX25L6435EMI10G MX25L6 |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
