| PART |
Description |
Maker |
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| DGS20-015A DGS20-018A |
150V gallium arsenide schottky rectifier
180V gallium arsenide schottky rectifier
|
IXYS
|
| GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01068B |
Gallium Arsenide Devices
|
Panasonic
|
| GN01067B |
Gallium Arsenide Devices
|
Panasonic
|
| GN04073N |
Gallium Arsenide Devices
|
Panasonic
|
| OH10007 |
Gallium Arsenide Devices
|
Panasonic
|
| 2SK649 |
Gallium Arsenide Devices
|
Panasonic
|
|
