| PART |
Description |
Maker |
| STK4231V STK4231 |
AF Power Amplifier(Split Power Supply)(100W+100W min, THD=0.08%)
|
SANYO[Sanyo Semicon Device]
|
| CAT5132 CAT5132ZI-10-GT3 CAT5132ZI-00-GT3 CAT5132Z |
DPP, 15V, 128 taps, I<sup>2</sup>C 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 128 POSITIONS, PDSO10
DPP, 15V, 128 taps, I<sup>2</sup>C 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 128 POSITIONS, PDSO10
16 Volt Digitally Programmable Potentiometer (DPP) with 128 Taps and I2C Interface
|
ON Semiconductor
|
| CAT511207 CAT5112VI-00-G CAT5112VI-50-G CAT5112ZI- |
DPP, NV 32 taps, Up/Down w/Buf 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO8
DPP, NV 32 taps, Up/Down w/Buf 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO8
32-Tap Digitally Programmable Potentiometer (DPP垄芒) with Buffered Wiper
32-Tap Digitally Programmable Potentiometer (DPP?? with Buffered Wiper
32-Tap Digitally Programmable Potentiometer (DPP? with Buffered Wiper
32-Tap Digitally Programmable Potentiometer (DPP⑩) with Buffered Wiper
|
ON Semiconductor
Catalyst Semiconductor
|
| MSMC-0102 MSMC-0104 MSMC-0103 MSMC-0105 MSMC-0100 |
PHOTOCELL,90mW,150V PEAK, 27KohmMAX LIGHT,2MohmMIN DARK
PHOTOCELL,150mW,200VPK,3.6Kohm MAX LITE,0.3Mohm MIN DARK
PHOTOCELL,90mW,150VPK,5Kohm, MAX LITE,20Mohm MIN DARK
PHOTOCELL,400mW,350VPK,8Kohm MAX LITE,1Mohm MIN. DARK
PHOTOCELL,100mW,150VPK,3Kohm, MAX LITE, 0.2Mohm MIN DARK
PHOTOCELL,100mW,150VPK,80Kohm, MAX LITE,5Mohm MIN DARK
CAP,CERM,DISC,470PF,1KV,20%
CAP,CERM,DISC,0.047UF,1KV,20%
AP,CERM,DISC,5PF,50V,20% INCREMENTS of 10
PHOTOCELL,90mW,150VPK,27Kohm, MAX LITE,0.3Mohm MIN DARK 医药0W的超小型开关电
PHOTOCELL,90mW,150VPK,10Kohm, MAX LITE,20Mohm MIN DARK 医药0W的超小型开关电
|
Astrodyne, Inc.
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| CAT511108 CAT5111ZI-00 CAT5111ZI-10 CAT5111LI-00-G |
DPP, NV 100 taps, Up/Down w/Buf 100K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8
DPP, NV 100 taps, Up/Down w/Buf 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8
DPP, NV 100 taps, Up/Down w/Buf 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8
100-Tap Digitally Programmable Potentiometer (DPP? with Buffered Wiper
100-Tap Digitally Programmable Potentiometer (DPP?? with Buffered Wiper
100-Tap Digitally Programmable Potentiometer (DPP垄芒) with Buffered Wiper
100-Tap Digitally Programmable Potentiometer (DPP⑩) with Buffered Wiper
|
ON Semiconductor
Catalyst Semiconductor
|
| CAT5221WI-00 CAT5221WI-10 CAT5221WI-25 CAT5221WI-5 |
DPP, NV, Quad 64 taps, I<sup>2</sup>C DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 64 POSITIONS, PDSO20
DPP, NV, Quad 64 taps, I<sup>2</sup>C DUAL 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 64 POSITIONS, PDSO20
Dual Digitally Programmable Potentiometer (DPP⑩) with 64 Taps and I2C Interface
Dual Digitally Programmable Potentiometer (DPP垄芒) with 64 Taps and I2C Interface
Dual Digitally Programmable Potentiometer (DPP?? with 64 Taps and I2C Interface
Dual Digitally Programmable Potentiometer (DPP? with 64 Taps and I2C Interface
|
ON Semiconductor
Catalyst Semiconductor
http://
|
| BZY91C7V5R BZY91C62R BZY91C68R |
Diode Zener Single 7.45V 6% 100W 2-Pin DO-5
Diode Zener Single 62V 6% 100W 2-Pin DO-5
Diode Zener Single 68V 6% 100W 2-Pin DO-5
|
New Jersey Semiconductor
|
| TO-263-5 |
A : MIN 9.800 MAX 10.668 B : MIN 8.200 MAX 9.169
|
Analog Microelectronics
|
| MSOP-8 |
A1 : MIN 0.000 MAX 0.150 A2 : MIN 0.750 MAX 0.950
|
Analog Microelectronics
|
| P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC;
General Purpose EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
|
