| PART |
Description |
Maker |
| BUD7312 BUD7312-SMD |
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-251
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252
From old datasheet system
Silicon NPN High Voltage Switching Transistor
|
VISHAY TELEFUNKEN
|
| KSC5502DTM |
NPN Triple Diffused Planar Silicon Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| P6KEXXXAG P6KEXXXA P6KEXXXARL P6KEXXXARLG P6KE18G |
600 W Transient Voltage Suppressor 47 V SUR40 Unidirectional; Package: Surmetic 40, Axial Lead; Container: Tape and Reel; Qty per Container: 4000 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
600 Watt Peak Power Surmetic TM -40 Transient Voltage Suppressors
|
ONSEMI[ON Semiconductor]
http://
|
| MMBT4401-TP |
TRANSISTOR NPN GP 40V SOT23 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
|
| 2N4854U 2N4854 2N3838 JAN2N3838 JAN2N4854 JAN2N485 |
NPN PNP Complimentary; Package: 6_PIN_Flatpack; 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
|
