| PART |
Description |
Maker |
| BSS129 |
150 mA, 230 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-18
|
VISHAY INTERTECHNOLOGY INC
|
| BSS129-TR1 |
150 mA, 230 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
VISHAY SILICONIX
|
| NX3008PBK NX3008PBK215 NX3008PBK-15 |
30 V, 230 mA P-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
| IXFH230N10T |
230 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS CORP
|
| 2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SUM23N15-73 |
N-Channel 150-V (D-S) 175C MOSFET
N-Channel 150-V (D-S) 175 C MOSFET
|
VISAY[Vishay Siliconix]
|
| SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
|
