| PART |
Description |
Maker |
| SIA421DJ-T1-E3 |
12 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| 94SVP157X0016F8 94SVP827X06R3F12 |
CAP 150UF 16VDC 20% 10 X 8MM SMD 0.035 OHM 2670MA 2000 HR - Tape and Reel
Cap Aluminum 820uF 6.3V 20% (10 X 12.7mm) SMD 0.014 Ohm 5040mA 2000 hr 105C
|
Vishay Sprague
|
| MTW45N10E MTW45N10E_D ON2699 MTW45N10 |
From old datasheet system
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| APT40M35JVFR |
93 A, 400 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
ADPOW[Advanced Power Technology]
|
| BUK7635-55A K7635-55A/T3 |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
35 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| STP30NE06L STP30NE06LFP 6269 |
From old datasheet system
N - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FP STripFET TM POWER MOSFET
N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
| APT40M35PVR |
POWER MOS V 400V 89A 0.035 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APTC60TDUM35PG |
Triple dual Common Source Super Junction MOSFET Power Module 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
