PART |
Description |
Maker |
MG1041 MG1041-11 MG1042-11 MG1043-11 MG1044-11 MG1 |
23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE GUNN Diodes Anode Heat Sink
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
ATF-13736 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-13736 ATF-13736-STR ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
ATF-10736 |
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
AD8341ACPZ-WP1 AD8341-EVAL CPZ-REEL72 |
1.5 GHz to 2.4 GHz RF Vector Modulator 1.5 GHz.4 GHz射频矢量调制
|
Analog Devices, Inc.
|
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|