| PART |
Description |
Maker |
| DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
| ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| D5006-24 D5006-36 DVF4559-04 |
60 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
130 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
|
SKYWORKS SOLUTIONS INC
|
| ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-26836 ATF-26836-STR ATF-26836-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard...
|
| NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
|
Agilent(Hewlett-Packard...
HP[Agilent(Hewlett-Packard)]
|
| EBOX565-500-FL-DC-6300U EBOX565-500-FL-DC-6100U |
Intel? Core?i5-6300U 2.4 GHz/i3-6100U 2.3 GHz/CeleronR 3955U 2.0 GHz (Skylake ULT SoC)
|
Axiomtek Co., Ltd.
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
