PART |
Description |
Maker |
2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
SFT815 |
HIGH ENERGY FAST SWITCHING NPN POWER TRANSISTOR 90 AMPS 300 V 90 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Solid State Devices, Inc.
|
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
MJE13002 |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 NPN SILICON POWER TRANSISTOR
|
UNISONIC TECHNOLOGIES CO LTD UTC[Unisonic Technologies]
|
SDM5013 SDM6000 SDM3203 SDM5005 SDM5004 SDM4006 |
10 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-3 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 5 A, 40 V, PNP, Si, POWER TRANSISTOR 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 20 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-3 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING 0.3 A, 300 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
|
APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
KSC1507OJ69Z |
0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
MJE13003 MJE13002 ON2007 13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS 1.5安培NPN硅功率晶体管300000 GT 6C 3#4 3#16 PIN RECP SEMICONDUCTOR TECHNICAL DATA From old datasheet system
|
MOTOROLA INC Mospec Semiconductor, Corp. Motorola, Inc. ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
NTE2412 |
100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413)
|
NTE[NTE Electronics] NTE Electronics, Inc.
|
|