PART |
Description |
Maker |
AEPDH4M9L-10S-NP AEPDS4M9L-10S-NP AEPDH4M9L-12N-NP |
4M X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 SIMM-30 4M X 9 MULTI DEVICE DRAM MODULE, 120 ns, SMA30 SIMM-30
|
Linear Technology, Corp.
|
KMM5321200C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5362003 KMM5362003G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
KMM53216004BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5328004CSWG KMM5328004CSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
KMM53616004BK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
KMM53616004CK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|