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PEF3394E-V22 - Enhanced Next Generation Analog Telephony Solutions

PEF3394E-V22_6978128.PDF Datasheet
 Full text search : Enhanced Next Generation Analog Telephony Solutions
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M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
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LATTICE SEMICONDUCTOR CORP
PM9311-UC PM9312-UC PM9315-HC PM9313 PM9313-HC ENHANCED TT1SWITCH FABRIC SPECIALTY TELECOM CIRCUIT, CBGA624
ENHANCED TT1 SWITCH FABRIC
 PMC-Sierra, Inc.
PM9313-HC PM9315-HC PM9315 PM9311 PM9311-UC PM9312 Enhanced TT1TM Switch Fabric
ENHANCED TT1⑩ SWITCH FABRIC
ENHANCED TT1 SWITCH FABRIC
 PMC[PMC-Sierra, Inc]
APT100GF60JRD The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
 Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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 Toshiba, Corp.
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From old datasheet system
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PMN45EN PMN45EN-01 TRENCHMOS⒙ ENHANCED LOGIC LEVEL FET
TrenchMOS enhanced logic level FET
TrenchMOS? enhanced logic level FET
From old datasheet system
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The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
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IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE BIPOLAR TRANSISTOR
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