| PART |
Description |
Maker |
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FCA22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
| IRFB4710 IRFSL4710 IRFS4710 |
Power MOSFET(Vdss=100v Rds(on)max=0.014ohm Id=75A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)
|
IRF[International Rectifier]
|
| 2SB631 2SB631K 2SD600 2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| TEA1522P TEA1524P TEA1522T TEA1521 TEA1521P TEA152 |
CAP .082UF 100V PEN FILM 1913 5%
STARplug SWITCHING REGULATOR, 200 kHz SWITCHING FREQ-MAX, PDIP8
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| 1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41
Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
|
Littelfuse, Inc.
|
| SR211A101JTA SR211A101KTA SR305C105KT600C SR211C68 |
KONDENSATOR RADIAL 100PF 100V 5ST
KONDENSATOR RADIAL 1UF 63/50V 5ST
KONDENSATOR RADIAL 0.0068UF 100V 5ST
KONDENSATOR AXIAL 0.1UF 63/50V
KONDENSATOR AXIAL 22PF 100V
KONDENSATOR RADIAL 0.01UF 63/50V 5ST
KONDENSATOR RADIAL 0.1UF 63/50V 5ST
KONDENSATOR AXIAL 1UF 63/50V
KONDENSATOR AXIAL 0.0022UF 63/50V
KONDENSATOR AXIAL 0.01UF 63/50V KONDENSATOR轴向0.01UF 63/50V
KONDENSATOR RADIAL 10PF 100V 5ST KONDENSATOR径向10PF 100VST
KONDENSATOR RADIAL 15PF 100V 5ST KONDENSATOR径向15PF 100VST
KONDENSATOR RADIAL 0.15UF 100V 5ST KONDENSATOR径向0.15UF 100VST
KONDENSATOR RADIAL 1000PF 100V 5ST KONDENSATOR径向1000pF00VST
KONDENSATOR RADIAL 0.33UF 63/50V 5ST KONDENSATOR径向0.33UF 63/50V 5ST
KONDENSATOR AXIAL 10PF 100V KONDENSATOR轴向10PF 100V
KONDENSATOR RADIAL 0.01UF 100V 5ST
KONDENSATOR RADIAL 0.001UF 100V 5ST
|
AVX, Corp.
Standard Power
Omron Electronics, LLC
|
| CDBZ5T30100-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=30A
|
Comchip Technology
|
