| PART |
Description |
Maker |
| KDB2670 FDB2670 KDB2670FDB2670 |
N-Channel PowerTrench MOSFET
19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP2535GEY-HF AP2535GEY-HF-14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| STW80NF10 7305 |
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFETPOWER MOSFET N沟道100V 0.012ohm - 80A 247低栅极电荷STripFET⑩功率MOSFET
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AP2310GG-HF AP2310GG-HF-14 |
Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP2606GY-HF AP2606GY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| STS11NF30L STS11NF30L07 |
N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET II Power MOSFET
N-channel 30V - 0.0085ヘ - 11A SO-8 Low gate charge STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
