| PART |
Description |
Maker |
| EIA1314-4P |
13.75-14.5 GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EIC0910A-8 |
9.20-10.00 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1112A1-8 |
11.70-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1414A1-12 |
14.00-14.50 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1314-12 |
13.75-14.50 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC2832-2 |
2.80-3.20 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1111-6 |
11.0-11.5 GHz 6-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1012-12 |
10.95-12.75 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1415-0.3P |
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1212-8 |
12.20-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
