| PART |
Description |
Maker |
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| R50440TS |
300 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI CORP-COLORADO
|
| CMPTA94BK |
300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
| MJE13003 13003BR MJE13002 |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS
|
Motorola, Inc
|
| MJE13003 MJE13003G |
SWITCHMODE TM Series NPN Silicon Power Transistor 300 AND 400 VOLTS 40 WATTS
|
ONSEMI[ON Semiconductor]
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| MJE13003 MJE13002 ON2007 13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS 1.5安培NPN硅功率晶体管300000
GT 6C 3#4 3#16 PIN RECP
SEMICONDUCTOR TECHNICAL DATA
From old datasheet system
|
MOTOROLA INC
Mospec Semiconductor, Corp.
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MURP20040CT MURP20020CT MURP20020CT_06 MURP20020CT |
100 A, 300 V, SILICON, RECTIFIER DIODE
ULTRAFAST RECTIFIERS 200 AMPERES, 200−400 VOLTS
|
ONSEMI[ON Semiconductor]
|
| PKJ4418LEPI |
1-OUTPUT 46 W DC-DC REG PWR SUPPLY MODULE 2.300 X 2.400 INCH, 0.330 INCH HEIGHT, LOW PROFILE, HALF BRICK PACKAGE-9/8
|
Ericsson Power Modules
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
