| PART |
Description |
Maker |
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| MTD2006F |
Power ICs / Stepper Motor Drivers (MTD Series) Operation : Bipolar
Dual full-bridge for a bipolar motor
|
Shindengen Electric Mfg.Co.Ltd
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| UPC1652G |
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER
MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOP,8PIN,PLASTIC
From old datasheet system
|
NEC Corp.
NEC Electron Devices
|
| A120212 |
The Allegro A1202 and A1203 Hall-effect bipolar switches are next-generation replacements and extension of the popular Allegro A3133 and A3132 bipolar switch product line.
|
Allegro MicroSystems
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| FA7612CN FA7612CP FA7612CPN FA7610CN FA7610CP FA76 |
Bipolar IC for switching power supply control
FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control
FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control
CAP CER 2000PF 50V 5% C0G 0603 0.08 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CPH6223-TL-E |
Bipolar Transistor
Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
