| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SD1001 |
World standard miniature package:SOT-89. High collector-emitter voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB800 |
World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V
|
TY Semiconductor Co., Ltd
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| M1MA142WAT1 M1MA141WAT1 ON0325 M1MA141WAT1_D M1MA1 |
SC-70/SOT-323 PACKAGE SINGLE SILICON
SC-70/SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola Inc
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| NSB1010XV5T5 |
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| 2SD1101 |
Low Frequency amplifier. Collector-base voltage VCBO 25 V
|
TY Semiconductor Co., Ltd
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
