| PART |
Description |
Maker |
| MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| SDM5013 SDM6000 SDM3203 SDM5005 SDM5004 SDM4006 |
10 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-3
15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3
5 A, 40 V, PNP, Si, POWER TRANSISTOR
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
20 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-3
15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| UPA1458 UPA1458H UPA1458H-AZ |
5 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
Micrel Semiconductor, Inc.
NEC[NEC]
|
| 2N6676 JANTX2N6693 JAN2N6676 JAN2N6678 JAN2N6691 J |
NPN Transistor
From old datasheet system
NPN POWER SILICON TRANSISTOR 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61
|
MICROSEMI[Microsemi Corporation]
http://
Microsemi, Corp.
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| ASI10723 VHB10-28S |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| VMB10-12F |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| ASI10727 VHB40-28S ASI10637 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| BLW31 |
From old datasheet system
NPN SILICON RF POWER TRANSISTOR
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC
Advanced Semiconductor, Inc.
|
| B25-28 B2528 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10562 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator L BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
|
