| PART |
Description |
Maker |
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| SDA20000UF SDA25000UF SDA2500UF SDA7500UF SDA10000 |
0.5 AMPS 2.5kV thru 25kV ULTRAFAST RECOVERY RECTIFIER ASSEMBLY 0.5 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| SP50F FP50F FP75F SP25F FP25F SP75F FP150F FP100F |
High Voltage Rectifier Stacks 2.2 A, 10000 V, SILICON, RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
| BAT54CLT3G |
Schottky Diode (dual, common cathode) SOT23 30V; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236
|
ON Semiconductor
|
| CGS103U075R4L3PH CGS103U075R4L4PHS CGS103U075R4L3P |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, STUD MOUNT RADIAL LEADED, CAN
|
Aerovox, Corp.
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| HFA1135ML/883 |
OP-AMP, 10000 uV OFFSET-MAX, CQCC20
|
HARRIS SEMICONDUCTOR
|
| HFA1102Y |
OP-AMP, 10000 uV OFFSET-MAX, UUC8
|
HARRIS SEMICONDUCTOR
|
| DBZ3410KVDC2500PF-2050R6000 |
1 FUNCTIONS, 10000 V, 6 A, FEED THROUGH CAPACITOR CERAMIC PACKAGE-2
|
Vishay Beyschlag
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
| MMSF10N02ZR2 |
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET CASE 751-07, SOP-8
|
ON Semiconductor
|
|
