| PART |
Description |
Maker |
| H-1201 |
PDB241-GTR Series - 24 mm Guitar Potentiometer
|
Bourns Electronic Solutions
|
| MG75N2YS1 |
GTR Modules
|
Toshiba
|
| MG15G6EL1 |
GTR Module
|
Toshiba
|
| MIG25Q901H |
Integrated GTR Module
|
Toshiba
|
| MG150J7KS50 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MIG20J901H |
INTEGRATED GTR MODULE 综合滋养模块
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TF1202 E005911 |
SOLID STATE GTR DRIVER MODULE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MG30G6EL2 |
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE 东芝滋养模块硅npn型三重扩散型
|
Renesas Electronics, Corp.
ETC
Toshiba Semiconductor
|
| MBRF10100-G MBRF1030-G MBRF1040-G |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
|
Comchip Technology
|
| CFRA201-G CFRA202-G |
Fast Recovery Rectifiers, V<sub>RRM</sub>=50V, V<sub>R</sub>=50V, I<sub>O</sub>=2A
Fast Recovery Rectifiers, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=2A
|
Comchip Technology
|
| MG100Q1ZS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG150Q2YS51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
