| PART |
Description |
Maker |
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| SST12LP10 SST12LP10-QVC SST12LP14A-QVCE-K SST12LP1 |
2.4 GHz High-Linearity Power Amplifier
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| LD7260 |
6 GHz / 2.25 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 2.25 kW CW PPM FOCUSING HIGH POWER GAIN
6 GHz, 2.25 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| LD7263 |
14 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN
14 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| HMC-C026 |
From old datasheet system
WIDEBAND HIGH GAIN POWER AMPLIFIER MODULE, 2 - 20 GHz
|
Hittite Microwave Corporation
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
