| PART |
Description |
Maker |
| NNCD4.7G NNCD4.3G |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (QUARTO TYPE : COMMON ANODE) 5 PIN MINI MOLD
|
NEC
|
| NNCD68RG NNCD6.8RG NNCD6.8RG-T2 NNCD6.8RG-T1 |
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD
ESD noise clipping diode 5pin SC-74A low capacitance
|
NEC Corp.
NEC[NEC]
|
| FA1A4Z FA1A4ZL68 FA1A4ZL67 FA1A4ZL69 FA1A4Z-L FA1A |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
NEC Corp.
ON Semiconductor
|
| 2SC5178 2SC5178-T1 2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC Corp.
|
| 2SA812 2SA812M6 2SA812M4 2SA812M5 2SA812M7 2SB812- |
Silicon transistor
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
AUDIO FREQUENCY/GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| FA1L4M FA1L4 FA1L4M-T2B FA1L4M-L FA1L4M-T1B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| FA1A4P FA1A4P-T1B FA1A4P-L FA1A4P-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| FA1L3Z FA1L3Z-L FA1L3Z-T1B FA1L3Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
|
NEC
|
