| PART |
Description |
Maker |
| BD201 BD203 |
(BD201 / BD203) SILCON EPITAXIAL-BASE POWER TRANSISTORS
|
Comset Semiconductors
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BDT41 |
Silicon Epitaxial Base Power Transistors
|
ETC
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BD935 BD937 BD939 BD941 BD933 |
SILICON EPITAXIAL BASE POWER TRANSISTORS
Silicon Epitaxial Power Transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2N3789-12 |
EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|
| BD201 BD202 BD203 |
Epitaxial-Base, Silicon
|
New Jersey Semi-Conduct...
|
| 2N3789 2N3713 2N3714 2N3715 2N3790 2N3716 |
EPITAXIAL-BASE NPN - PNP
|
Comset Semiconductor
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
